Conducting atomic force microscopy for nanoscale electrical characterization of

2019-05-31 16:48:04

thickness nm force oxide microscopy

责任者: Olbrich, Alexander;Ebersberger, Bernd;Boit, Christian 单位: Siemens Semiconductor Div, Munich, Ger 来源出处: Applied Physics Letters,1998,73(21):3114-3116 摘要: Conducting atomic force microscopy (C-AFM) is demonstrated to be a highly sensitive technique for the determination of the local oxide thickness of 3-40 nm SiO2 films with a thickness resolution on the order of 0.3 nm. The lateral resolution is about 10 nm. Fowler-Nordheim current maps simultaneously acquired with the oxide topography at constant tip-sample voltage, have been used for the detection of oxide thinning at the LOCOS edge of a 20 nm MOS capacitor. The local I-V curves obtained at the LOCOS edge and gate oxide reveal an oxide thickness difference of 3.3 nm. With decreasing gate oxide thickness (<5 nm) in MOS structures even variations of oxide thickness in the range of 0.1 nm will have a strong impact on the performance of ULSI circuits. 关键词: Thin films;Silica;Atomic force microscopy;Electric properties;Nanostructured materials;Electric variables measurement;Current voltage characteristics;MOS capacitors;Fowler-Nordheim tunneling current;Oxide thinning