EVIDENCE FOR A PHOTOCURRENT FANO RESONANCE IN AN ARTIFICIAL NANOSTRUCTURE

2020-04-05 17:35:13

mass GaAs inversion spectrometry Fano

责任者: DELLORTO, T;DI VENTRA, M;ALMEIDA, J;COLUZZA, C;MARGARITONDO, G 单位: 来源出处: PHYSICAL REVIEW B, v 52, JUL 15 1995, p R2265- R2268 摘要: We present internal-photoemission (photocurrent) experimental evidence for a Fano resonance at an n-p GaAs homojunction with a 0.5-ML Si intralayer (delta doping). This is one of a very few cases in which Fano resonances have been observed in artificial nanostructures. Our results show that this fundamental class of phenomenona plays a relevant role in band-gap engineering, by affecting the transport and phototransport properties of delta-doping nanostructures. 关键词: COALESCENCE; DIRECT LASER VAPORIZATION; FULLERENE; MASS DISTRIBUTION; TOF MASS SPECTROMETRY TOF MASS SPECTROMETRY; BAND OFFSETS; INTERFACES; INTERFERENCE; DISCONTINUITIES; INTRALAYER; INVERSION; GAAS INVERSION; GAAS