REAL-TIME SPECTROELLIPSOMETRY STUDY OF THE EVOLUTION OF BONDING IN DIAMOND THIN-

2020-04-05 17:09:18

growth pA electron Of 16802.

责任者: HONG, BY;WAKAGI, M;DRAWL, W;MESSIER, R;COLLINS, RW 单位: PENN STATE UNIV,DEPT ENGN SCI & MECH,UNIVERSITY PK,PA 16802.;PENN STATE UNIV,DEPT PHYS,UNIVERSITY PK,PA 16802. 来源出处: PHYSICAL REVIEW LETTERS, v 75, AUG 7 1995, p 1122- 1125 摘要: Real time spectroellipsometry (RTSE) has been performed during the nucleation and growth of nanocrystalline thins films prepared by plasma-enhanced chemical vapor deposition onto Si substrates. RTSE shows that a significant volume fraction of nondiamond (or sp(2)-bonded) carbon forms during thin film coalescence and is trapped near the substrate interface between similar to 300 Angstrom diamond nuclei. Although this behavior is observed over a range of CH4/H-2/O-2 gas compositions, the interfacial sp(2)-bonded carbon volume can be minimized by operating just within the growth-etch boundary of the diamond growth phase diagram. 关键词: NANOSTRUCTURES; ELECTRON DIFFRACTION; ELECTRON MICROSCOPY; NEUTRON SCATTERING; SUPERCONDUCTIVITY SCATTERING; SUPERCONDUCTIVITY; SPECTROSCOPIC ELLIPSOMETRY; CARBON; DEPOSITION; GRAPHITE