SYNTHESIS AND CHARACTERIZATION OF INP, GAP, AND GAINP2 QUANTUM DOTS

2020-03-26 15:30:32

gap InP Of QDs GaInP2

责任者: MICIC, OI;SPRAGUE, JR;CURTIS, CJ;JONES, KM;MACHOL, JL;NOZIK, AJ;GIESSEN, H;FLUEGEL, B;MOHS, G;PEYGHAMBARIAN, N 单位: UNIV ARIZONA,CTR OPT SCI,TUCSON,AZ 85721. 来源出处: JOURNAL OF PHYSICAL CHEMISTRY, v 99, MAY 11 1995, p 7754- 7759 摘要: Quantum dots (QDs) of InP, GaP, and GaInP2 with diameters ranging from 20 to 65 Angstrom were synthesized as well-crystallized nanoparticles with bulk zinc blende structure. The synthesis of InP, GaP, and GaInP2 QDs was achieved by heating appropriate organometallic precursors with stabilizers in high boiling solvents for several days to produce QDs which can be dissolved in nonpolar organic solvents, forming transparent colloidal QD dispersions. The high sample quality of the InP and GaP QDs results in excitonic features in the absorption spectra. Ternary QDs of GaInP2 were synthesized with a well-crystallized zinc blende structure and lattice spacing between InP and GaP. The QDs were characterized by TEM, powder x-ray diffraction, steady state optical absorption and photoluminescence spectroscopy, transient photoluminescence spectroscopy, and fs to ps pump-probe absorption (i.e., hole-burning) spectroscopy. 关键词: PLASMID DNA; STRAND BREAK; AQUEOUS SOLUTION; TEMPERATURE; LIFETIME OF HYDROXYL RADICAL HYDROXYL RADICAL; V SEMICONDUCTOR CLUSTERS; INDIUM-PHOSPHIDE; ORDERED GAINP2; GAAS; PHOTOLUMINESCENCE; NANOCRYSTALLITES; SYSTEMS; ALLOYS PHOTOLUMINESCENCE; NANOCRYSTALLITES; SYSTEMS; ALLOYS