HIGH-SENSITIVITY CHANNELING ANALYSIS OF LATTICE DISORDER NEAR SURFACES USING SEC

2020-03-26 05:55:11

Si ion secondary Japan Univ

责任者: KUDO, H;FUKUSHO, T;TANABE, A;ISHIHARA, T;INOUE, T;SATOH, M;YAMAMOTO, Y;SEKI, S 单位: UNIV TSUKUBA,TANDEM ACCELERATOR CTR,TSUKUBA,IBARAKI 305,JAPAN.;IWAKI MEISEI UNIV,DEPT ELECTR ENGN,IWAKI,FUKUSHIMA 970,JAPAN.;HOSEI UNIV,ION BEAM TECHNOL RES CTR,KOGANEI 184,TOKYO,JAPAN.;HOSEI UNIV,DEP 来源出处: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, v 34, FEB 1995, p 615- 619 摘要: Under the channeling condition of 56 MeV O8+, the sensitivity of keV secondary-electron yield to lattice disorder in crystals has been investigated for Si and Ge damaged with 5 keV Ar+, and for epitaxially grown CeO2 on Si and Si on sapphire. The analysis indicates that the ratio of channeling to random yield is a sensitive measure oi displaced atoms whose areal density is equivalent to a nanometer-thick amorphous layer on a crystal surface. This technique enables low-density defect analyses where commonly used ion backscattering spectrometry is unapplicable. 关键词: ION BEAM ANALYSIS; ION CHANNELING; SHADOWING EFFECT; ION-INDUCED SECONDARY ELECTRON SECONDARY ELECTRON; EPITAXIAL-GROWTH; CEO2 LAYERS; SILICON; CRYSTALS