LOCAL MODIFICATION OF N-SI(100) SURFACE IN AQUEOUS-SOLUTIONS UNDER ANODIC AND CA

2020-03-25 10:59:40

HF potential surface silicon oxide

责任者: YE, JH;PEREZMURANO, F;BARNIOL, N;ABADAL, G;AYMERICH, X 单位: UNIV AUTONOMA BARCELONA,DEPT PHYS ELECTR,E-08193 BARCELONA,SPAIN. 来源出处: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v 13, JUL-AUG 1995, p 1423- 1428 摘要: Local modification of H-terminated n-Si(100) surface in an aqueous hydrofluoric acid (HF) solution was carried out under anodic and cathodic potential polarization with an in situ scanning tunneling microscope (STM). Two different modifications in the HF solution were obtained. At cathodic polarized potential, H-terminated silicon surface is attacked by HF at the defects of silicon surface under an electric field between the tip and silicon surface. However, at anodic polarized potential (by applying positive potential pulses), the nanostructures produced are probably due to the formation of silicon oxide. The apparent depth of the nanostructures, as observed with the STM, decreases with time because of the dissolution of silicon oxide in the solution. Effects of the tunneling current, the potential of silicon surface, and pulse amplitude show that the formation of silicon oxide is dependent on the electric field and local electrochemical oxidation of silicon surface at anodic potential. (C) 1995 American Vacuum Society. 关键词: METAL SURFACTANTS; MICROEMULSIONS; NANOCLUSTERS; QUANTUM-SIZED SEMICONDUCTORS; REVERSED MICELLES SEMICONDUCTORS; REVERSED MICELLES; SILICON SURFACES; NANOMETER-SCALE; MANIPULATION; AIR