Long-lived optical phonons in ZnO studied with impulsive stimulated Raman scatte

2020-03-21 11:31:12

Raman scattering lifetime phonon stimulated

责任者: Aku-Leh, C.;Zhao, J.;Merlin, R.;Menendez, J.;Cardona, M. 单位: Dept. of Phys., Univ. of Michigan, Ann Arbor, MI, USA 来源出处: Physical Review B (Condensed Matter and Materials Physics)(Phys. Rev., B, Condens, Matter Mater. Phys. (USA)),2005/05/15,71(20):205211-1 摘要: The anharmonic properties of the low-frequency E2 phonon in ZnO were measured using impulsive stimulated Raman scattering. At 5 K, the frequency and lifetime are (2.9789±0.0002) THz and (211±7) ps. The unusually long lifetime and the high accuracy in the determination of the frequency hold promise for applications in metrology, quantum computation and materials characterization. The temperature dependence of the lifetime is determined by two-phonon upconversion decay contributions, which vanish at zero temperature. Results suggest that the lifetime is limited by isotopic disorder and that values in the nanosecond range may be achievable in isotopically pure samples 关键词: anharmonic lattice modes;II-VI semiconductors;phonon-phonon interactions;stimulated Raman scattering;wide band gap semiconductors;zinc compounds;long-lived optical phonons;impulsive stimulated Raman scattering;lifetime temperature dependence;two-photon upconversion decay;isotropic disorder;5 K;ZnO