Low-field semiclassical carrier transport in semiconducting carbon nanotubes

2020-03-19 11:43:11

carbon transport nanotubes carrier phonons

责任者: Pennington, G.;Goldsman, N. 单位: Dept. of Electr. Eng., Maryland Univ., College Park, MD, USA 来源出处: Physical Review B (Condensed Matter and Materials Physics)(Phys. Rev., B, Condens, Matter Mater. Phys. (USA)),2005/05/15,71(20):205318-1 摘要: The theory of semiclassical carrier transport in semiconducting single-walled carbon nanotubes is presented. The focus is on transport in response to a small, axially applied field. Carriers are considered to scatter with longitudinal, torsional, and radial breathing acoustic phonons. Theory predicts large mobilities and large mean free paths, each increasing with increasing tube diameter. This results from a small effective mass, which varies inversely with the nanotube diameter. In large diameter tubes, the carrier mobility at 300 K is approximately 105 cm2 V s, while the mean free path approaches 0.5-0.8 μm. Results depend on the lattice temperature, Poissons ratio, and the chirality angle of the nanotube. Theoretical results compare very well with experiments on long semiconducting carbon nanotubes. This indicates that transport in long single-walled carbon nanotubes is likely limited by phonon scattering at temperatures above ≈200 K 关键词: carbon nanotubes;carrier mean free path;carrier mobility;chirality;elemental semiconductors;phonons;Poisson ratio;low-field semiclassical carrier transport;semiconducting carbon nanotubes;axially applied field;longitudinal breathing acoustic phonons;torsional breathing acoustic phonons;radial breathing acoustic phonons;mean free paths;carrier mobility;nanotube diameter;lattice temperature;Poisson ratio;chirality angle;phonon scattering;300 K;0.5 to 0.8 micron;C