Confined phonons in Si nanowires

2020-03-19 02:08:47

Si Raman nanowires phonon confinement

责任者: Adu, K.W.;Gutierrez, H.R.;Kim, U.J.;Sumanasekera, G.U.;Eklund, P.C. 单位: Dept. of Phys., Pennsylvania State Univ., University Park, PA, USA 来源出处: Nano Letters(Nano Lett. (USA)),2005/03/,5(3):409-14 摘要: Raman microprobe studies of long crystalline Si nanowires reveal for the first time the evolution of phonon confinement with wire diameter. The Raman band at ~520 cm-1 in bulk Si is found to downshift and asymmetrically broaden to lower frequency with decreasing wire diameter D¯, in good agreement with a phenomenological model first proposed by Richter et al. An adjustable parameter (α) is added to the theory that defines the width of the Gaussian phonon confinement function. We find that this parameter is not sensitive to diameter over the range 4-25 nm 关键词: elemental semiconductors;nanowires;phonons;Raman spectra;semiconductor quantum wires;silicon;Raman microprobe;long crystalline nanowires;phonon confinement evolution;phenomenological model;adjustable parameter;Gaussian phonon confinement function;4 to 25 nm;Si