Blueshifted Raman scattering and its correlation with the [110] growth direction

2020-03-17 04:08:30

growth Raman direction nanowires Ga2O3

责任者: Rao, R.;Rao, A.M.;Xu, B.;Dong, J.;Sharma, S.;Sunkara, M.K. 单位: Dept. of Phys. & Astron., Clemson Univ., SC, USA 来源出处: Journal of Applied Physics(J. Appl. Phys. (USA)),2005/11/01,98(9):94312-1 摘要: The Raman spectrum of gallium oxide (β-Ga2O3) nanowires with [001] growth direction is identical to that of the bulk Ga2O3 [Y. C. Choi et al. Adv. Mater. 12, 746 (2000)] while that of β-Ga2O3 nanowires with [401¯] growth direction is redshifted by 4-23 cm-1 [Y. H. Gao et al. Appl. Phys. Lett. 81, 2267 (2002)]. Here we report the Raman and Fourier transform infrared spectra of β-Ga2O3 nanowires with [110] growth direction which is blueshifted relative to the bulk spectra by ~10-40 cm-1. Based on a first principles calculation of the strain dependence of Raman mode frequencies in bulk β-Ga2O3, we correlate the observed frequency shifts to growth-direction-induced internal strains in the nanowires 关键词: ab initio calculations;Fourier transform spectra;gallium compounds;infrared spectra;nanowires;Raman spectra;spectral line shift;blueshifted Raman scattering;[110] growth direction;gallium oxide nanowires;Raman spectrum;[401¯] growth direction;redshift;Fourier transform infrared spectra;first principles calculation;strain dependence;Raman mode frequencies;growth-direction-induced internal strains;Ga2O3