Pressure-dependent thermopower of individual bi nanowires

2020-03-08 15:01:30

The dependent Seebeck Fermi thermopower

责任者: Gitsu, D.;Konopko, L.;Nikolaeva, A.;Huber, T.E. 单位: Inst. of Appl. Phys., Acad. of Sci. of Moldova, Chisinau, Moldova 来源出处: Applied Physics Letters(Appl. Phys. Lett. (USA)),2005/03/07,86(10):102105-1 摘要: The 240-620 nm diameter nanowires were freely suspended and thermopower measurements were carried out over the temperature range 4-300 K and for stresses as high as 1 GPa. The peaks of up to 80 μV/K that are observed around 40 K are interpreted in terms of a model of diffusion thermopower under strong electron and hole-boundary scattering. The partial Seebeck coefficients are calculated from the stress-dependent carrier Fermi energies obtained from magnetoresistance measurements. The prospect of Bi nanowire arrays achieving high thermoelectric figure of merit is discussed 关键词: bismuth;Fermi level;magnetoresistance;nanowires;Seebeck effect;thermoelectric power;pressure dependent thermopower;diffusion;electron scattering;hole boundary scattering;partial Seebeck coefficient;carrier Fermi energy;magnetoresistance;Bi nanowire arrays;thermal stresses;240 to 620 nm;4 to 300 K;Bi