Composition of Ge(Si) islands in the growth of Ge on Si(111) by x-ray spectromic

2020-03-08 11:12:46

Si GE ray islands stoichiometry

责任者: Ratto, F.;Rosei, F.;Locatelli, A.;Cherifi, S.;Fontana, S.;Heun, S.;Szkutnik, P.-D.;Sgarlata, A.;De Crescenzi, M.;Motta, N. 单位: Inst. Nat. de la Recherche Scientifique-Energie, Univ. du Quebec, Varennes, Que., Canada 来源出处: Journal of Applied Physics(J. Appl. Phys. (USA)),2005/02/15,97(4):43516-1 摘要: The stoichiometry of Ge/Si islands grown on Si(111) substrates at temperatures ranging from 460 to 560°C was investigated by x-ray photoemission electron microscopy (XPEEM). By developing a specific analytical framework, quantitative information on the surface Ge/Si stoichiometry was extracted from laterally resolved XPEEM Si 2p and Ge 3d spectra, exploiting the chemical sensitivity of the technique. Our data show the existence of a correlation between the base area of the self-assembled islands and their average surface Si content: the larger the lateral dimensions of the 3D structures, the higher their relative Si concentration. The deposition temperature determines the characteristics of this relation, pointing to the thermal activation of kinetic diffusion processes 关键词: elemental semiconductors;germanium;island structure;nanostructured materials;self-diffusion;semiconductor thin films;stoichiometry;X-ray photoelectron spectra;Ge/Si islands;X-ray spectromicroscopy;stoichiometry;Si(111) substrates;X-ray photoemission electron microscopy;chemical sensitivity;self-assembled islands;Si concentration;thermal activation;kinetic diffusion;460 to 560 degC;Ge-Si