Interface phonons in semiconductor nanostructures with quantum dots

2020-03-04 01:33:51

optical interface quantum DOTS phonons

责任者: Ladanov, M.Yu.;Milekhin, A.G.;Toropov, A.I.;Bakarov, A.K.;Gutakovskii, A.K.;Tenne, D.A.;Schulze, S.;Zahn, D.R.T. 单位: Inst. of Semicond. Phys., Russian Acad. of Sci., Novosibirsk, Russia 来源出处: Journal of Experimental and Theoretical Physics(J. Exp. Theor. Phys. (Russia)),,():554-61 摘要: The vibrational spectra of structures with InAs quantum dots in an AlGaAs matrix and AlAs quantum dots in an InAs matrix are investigated experimentally and theoretically. The Raman spectra exhibit features that correspond to transverse-optical (TO), longitudinal-optical (LO), and interface phonons. The frequencies of interface phonons in InAs and AlAs quantum dots and in an AlGaAs matrix with various concentrations of aluminum are calculated with the use of experimental values of transverse- and longitudinal-optical phonons in the approximation of a dielectric continuum. It is shown that the model of a dielectric continuum adequately describes the behavior of interface phonons in structures with quantum dots under the assumption that the quantum dots are spheroidal 关键词: aluminium compounds;gallium arsenide;III-V semiconductors;indium compounds;interface phonons;nanostructured materials;Raman spectra;semiconductor quantum dots;interface phonons;semiconductor nanostructures;quantum dots;vibrational spectra;Raman scattering spectra;aluminum concentrations;transverse-optical phonons;longitudinal-optical phonons;dielectric continuum;InAs-AlGaAs;AlAs-InAs