Photoelectric effect and transport properties of a single CdS nanoribbon

2020-02-22 22:49:49

current photoelectric CdS microscopy nanoribbon

责任者: Xu, J.B.;Chen, J.;Xue, K.;An, J.;Tsang, S.W.;Ke, N.;Quan Li;Wang, C.R. 单位: Dept. of Electron. Eng., Chinese Univ. of Hong Kong, China 来源出处: Ultramicroscopy(Ultramicroscopy (Netherlands)),2005/11/,105(1-4):275-80 摘要: A single CdS nanoribbon-based photoelectric detector was fabricated by the shadow mask technique and conventional lithography. Atomic force microscopy (AFM) and micro-Raman techniques were applied to acquire the morphology and structure of a single CdS nanoribbon. Transmission electron microscopy reveals a single crystalline interior with a few local defects. From the current-voltage (I-V) measurements, it is found that the maximum current reached 15μA, and the photoconductivity variation could be as high as 25,000, as well as the corresponding current density is estimated to be about 7.0×105A/cm2. Besides the ohmic characteristic of the I-V curve by photoelectric effect, the nonlinear I-V curve owing to the Schottky contact is also found. The transient photocurrent response indicates the slow process by carrier trapping. [All rights reserved Elsevier] 关键词: atomic force microscopy;cadmium compounds;current density;II-VI semiconductors;nanolithography;nanostructured materials;photoconductivity;Schottky barriers;transmission electron microscopy;photoelectric effect;transport properties;CdS nanoribbon;photoelectric detector;shadow mask technique;conventional lithography;atomic force microscopy;microRaman techniques;transmission electron microscopy;current-voltage measurements;photoconductivity;current density;Schottky contact;transient photocurrent response;carrier trapping;CdS