Quantum transport in a nanosize double-gate metal-oxide-semiconductor field-effe

2020-02-20 00:17:51

Metal transport semiconductor gate oxide

责任者: Croitoru, M.D.;Gladilin, V.N.;Fomin, V.M.;Devreese, J.T.;Magnus, W.;Schoenmaker, W.;Soree, B. 单位: Univ. Antwerpen, Belgium 来源出处: Journal of Applied Physics(J. Appl. Phys. (USA)),2004/08/15,96(4):2305-10 摘要: A model for the nanosize double-gate silicon-on-insulator metal-oxide-semiconductor field-effect transistors is developed, which enables both physical accuracy and flexibility. The quantum Liouville equation in the Wigner function representation has been used to deal with the quantum transport problem. Accounting for electron scattering due to ionized impurities, acoustic phonons, and surface roughness at the Si/SiO2 interface, device characteristics are obtained as a function of structure parameters. From the analysis of the Wigner function, the coexistence of diffusive and ballistic transport naturally emerges. The obtained I-V characteristics show that the double-gate device is a potential structure for ultimate complementary metal-oxide-semiconductor scaling 关键词: ballistic transport;electron diffraction;elemental semiconductors;Liouville equation;MOSFET;nanostructured materials;phonon-impurity interactions;semiconductor device models;silicon;silicon compounds;surface phonons;surface roughness;Wigner distribution;quantum transport;nanosize double gate metal oxide semiconductor field effect transistor;physical accuracy;flexibility;quantum Liouville equation;Wigner function;electron scattering;ionized impurities;acoustic phonons;surface roughness;structure parameters;diffusive transport;ballistic transport;complementary metal oxide semiconductor scaling;Si-SiO2