Detection and characterization of silicon nanocrystals embedded in thin oxide la

2020-02-18 14:52:45

silicon ion nanocrystals oxide implantation

责任者: Perego, M.;Ferrari, S.;Fanciulli, M.;Assayag, G.B.;Bonafos, C.;Carrada, M.;Claverie, A. 单位: Lab. MDM-INFM, Agrate Brianza, Italy 来源出处: Journal of Applied Physics(J. Appl. Phys. (USA)),2004/01/01,95(1):257-62 摘要: Silicon nanocrystals embedded in a thin oxide layer can be used as charge storage elements in nonvolatile memory devices. The structural characteristics of the nanocrystals and their position in the oxide determine the electrical properties of the devices. In this work, silicon nanocrystals have been formed by ultralow-energy implantation (0.65-2.0 keV) of silicon in a 10 nm thin thermally grown SiO2 film on Si (100) followed by a thermal treatment. A time of flight secondary ion mass spectrometry (TOF-SIMS) methodology has been developed to detect the presence of silicon nanocrystals and to characterize them. The methodology allows one to obtain relevant information, such as the bandwidth and tunneling distance of Si nanocrystals. Chemical information about the presence of impurities introduced into the SiO2 layer during implantation and annealing have also been obtained. The advantages and disadvantages of this technique, based on TOF-SIMS in comparison with transmission electron microscopy, are discussed as well 关键词: annealing;doping profiles;elemental semiconductors;ion implantation;nanoparticles;secondary ion mass spectra;silicon;time of flight spectra;transmission electron microscopy;silicon nanocrystals;thin oxide layers;charge storage elements;nonvolatile memory devices;structure;electrical properties;ultralow-energy implantation;thermal treatment;time of flight secondary ion mass spectrometry;TOF-SIMS;tunneling;annealing;impurities;transmission electron microscopy;0.65 to 2.0 keV;10 nm;Si-SiO2