Growth of CdS nanowires using Na-4 mica as template

2020-02-18 12:26:35

Na nm CdS nanowires mica

责任者: Mukherjee, P.K.;Chakravorty, D. 单位: Indian Assoc. for the Cultivation of Sci., India 来源出处: Journal of Applied Physics(J. Appl. Phys. (USA)),2004/03/15,95(6):3164-9 摘要: Sodium fluorophlogopite mica of composition Na4Mg6Al4Si4O20F4·x H2O (referred to as Na-4 mica) was prepared by a sol-gel technique. CdS nanowires of 1.2 nm thickness were grown by using the nanochannels within the mica structure. Optical absorption spectra showed peaks at 350 and 504 nm, respectively. These are ascribed to the presence of CdS nanoclusters of diameter ~1.21 nm and CdS wires of length ~100 nm, respectively. The nanowires exhibited a photoluminescent peak at 2.37 eV arising due to excitons. The dielectric constant of the nanocomposite was found to be much larger (~95) than that of the base material (~17). This has been explained on the basis of a simple stacking of nanoscale capacitors within each grain of Na-4 mica 关键词: cadmium compounds;II-VI semiconductors;nanocomposites;nanowires;permittivity;photoluminescence;semiconductor growth;sol-gel processing;wide band gap semiconductors;CdS nanowires growth;Na-4 mica;sodium fluorophlogopite mica;Na4Mg6Al4Si4O20F4·H2O composition;sol-gel technique;nanochannels;mica structure;optical absorption spectra;nanoclusters;photoluminescent peak;dielectric constant;nanocomposite;nanoscale capacitors;1.2 nm;350 nm;504 nm;100 nm;1.21 nm;Na4Mg6Al4Si4O20F4H2O;CdS