Dielectric suppression of nanosolid silicon

2020-02-17 16:07:53

solution dielectric electron phonon semiconductors

责任者: Pan, L.K.;Chang Q Sun;Chen, T.P.;Li, S.;Li, C.M.;Tay, B.K. 单位: Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore 来源出处: Nanotechnology(Nanotechnology (UK)),2004/12/,15(12):1802-6 摘要: An analytical solution is presented showing that the dielectric susceptibility of a nanosolid depends functionally on the crystal binding that determines the bandgap and hence the essential processes of electron polarization, and on the electron-phonon coupling, that is often overlooked in theory considerations. The derived solution covers all the measured values of bandgap expansion that are beyond the reach of available approaches. Consistency between predictions and impedance measurements evidences the impact of atomic coordination-number imperfection on the dielectric performance of nanometric semiconductors and the validity of the given solution 关键词: electron-phonon interactions;elemental semiconductors;energy gap;nanostructured materials;optical susceptibility;permittivity;porous semiconductors;silicon;dielectric suppression;nanosolid silicon;analytical solution;dielectric susceptibility;crystal binding;band gap;porous materials;electron polarization;electron-phonon coupling;impedance;atomic coordination-number imperfection;nanometric semiconductors;Si