Growth of β-Ga2O3 nanoparticles by pulsed laser ablation technique

2020-02-15 01:31:00

electron emission laser nanoparticles diffraction

责任者: Lam, H.M.;Hong, M.H.;Yuan, S.;Chong, T.C. 单位: Data Storage Inst., Singapore, Singapore 来源出处: Applied Physics A (Materials Science Processing)(Appl. Phys. A, Mater. Sci. Process. (Germany)),2004/12/,A79(8):2099-102 摘要: This work investigates pulsed laser ablation for Ga2O3 nanoparticles. Nanoparticles with diameters of 10 to 500 nm were deposited on silicon substrates in large quantities, by KrF excimer laser ablation of a GaN (99.99% purity) target in high purity nitrogen (99.9995%) background gas at room temperature, without a catalyst. The particle size and phase structure of the as-deposited nanoparticles are examined by X-ray diffraction (XRD), field emission scanning electron microscope (FE-SEM), transmission electron microscope (TEM), and selected-area electron diffraction (SAD). FE-SEM images show that the nanoparticles aggregate to form micron-size nano-clusters at chamber pressures of 1 and 5 Torr. On the other hand, nanoparticles aggregate with chain-like nanostructures, are synthesized at high chamber pressures (⩾10 Torr). TEM images further reveal that chain-like nanostructures are formed by the aggregation of individual spherical and ellipsoidal nanoparticles. Photoluminescence measurement shows stable and broad blue emission at 445 nm 关键词: aggregation;gallium compounds;nanoparticles;nanotechnology;photoluminescence;pulsed laser deposition;scanning electron microscopy;thin films;transmission electron microscopy;X-ray diffraction;Ga2O3 nanoparticles;pulsed laser ablation;phase structure;X-ray diffraction;XRD;field emission scanning electron microscopy;transmission electron microscopy;TEM;selected area electron diffraction;aggregation;photoluminescence;blue emission;catalyst;particle size;room temperature;293 to 298 K;1 to 5 torr;Ga2O3