Mesoscopic transport in chemically doped carbon nanotubes

2020-02-14 22:38:29

carbon transport doped nanotubes calculations

责任者: Latil, S.;Roche, S.;Mayou, D.;Charlier, J.-C. 单位: PCPM & CERMIN, Univ. Catholique de Louvain, Louvain-la-Neuve, Belgium 来源出处: Physical Review Letters(Phys. Rev. Lett. (USA)),2004/06/25,92(25):256805-1 摘要: Electronic quantum transport is investigated in boron- and nitrogen-doped carbon nanotubes using tight-binding methods correlated to ab initio calculations. The present technique accurately accounts for both effects of dopants, namely, charge transfer and elastic scattering. Generic transport properties such as conduction mechanisms, mean-free paths, and conductance scalings are derived for various concentration of randomly distributed boron and nitrogen dopants. Our calculations allow direct comparison with experiments and demonstrate that a small amount of dopants (<0.5%) can drastically modify the electronic transport properties of the tube, which is certainly a key effect feature for envisioning nanoelectronics 关键词: ab initio calculations;boron;carbon nanotubes;carrier mean free path;mesoscopic systems;nitrogen;quantum interference phenomena;tight-binding calculations;mesoscopic transport;chemically doped carbon nanotubes;electronic quantum transport;boron-doped carbon nanotubes;nitrogen-doped carbon nanotubes;tight-binding methods;ab initio calculations;dopants;charge transfer;elastic scattering;conduction mechanisms;mean-free paths;conductance scalings;C:B;C:N