Large effects due to electron-phonon-impurity interference in the resistivity of

2020-02-12 04:37:49

interference electron nanowires phonon resistivity

责任者: Lin, J.-F.;Bird, J.P.;Rotkina, L.;Sergeev, A.;Mitin, V. 单位: Dept. of Electr. Eng., Arizona State Univ., Tempe, AZ, USA 来源出处: Applied Physics Letters(Appl. Phys. Lett. (USA)),2004/05/10,84(19):3828-30 摘要: The temperature-dependent resistivity of highly disordered Pt/C-Ga composite nanowires is shown to be well described by the interference of electron-phonon scattering and elastic electron scattering from boundaries and defects. The strongly disordered nature of these wires, combined with a high value of their Debye temperature, are responsible for the pronounced nature of the interference effects in their resistivity 关键词: carbon;Debye temperature;electrical resistivity;electron-phonon interactions;gallium;nanocomposites;nanowires;phonon-impurity interactions;platinum;electron-phonon-impurity interference;Pt/C-Ga composite nanowires resistivity;electron-phonon scattering;elastic electron scattering;boundaries;Debye temperature;Pt-C-Ga;SiO2