Kelvin probe force microscopy as a tool for characterizing chemical sensors

2020-02-06 09:34:41

potential force probe Kelvin microscopy

责任者: Grover, R.;Carthy, B.M.;Zhao, Y.;Jabbour, G.E.;Sarid, D.;Laws, G.M.;Takulapalli, B.R.;Thornton, T.J.;Gust, D. 单位: Opt. Sci. Center, Univ. of Arizona, Tucson, AZ, USA 来源出处: Applied Physics Letters(Appl. Phys. Lett. (USA)),2004/10/25,85(17):3926-8 摘要: We report on the use of Kelvin probe force microscopy in measuring the shift of the contact potential difference of micron-scale areas. The experimental results provide important information required for understanding and modeling the electrical characteristics of chemically sensitive field-effect transistors (ChemFETs). The temporal evolution in the shift of the contact potential difference of chemically sensitive monolayers of free-base porphyrin and zinc-porphyrin on exposure to pyridine gas was studied and their different behavior observed. The Kelvin probe force microscopy data on nanometer-scale areas were in agreement with those obtained with a conventional Kelvin probe on centimeter-scale areas. The accuracy of the measured shift in contact potential difference upon exposure to trace amounts of gas indicates the utility of Kelvin probe force microscopy as a means to characterize the operation of exposed-gate ChemFETs 关键词: atomic force microscopy;chemical sensors;contact potential;ion sensitive field effect transistors;monolayers;organic compounds;work function;Kelvin probe force microscopy;chemical sensors;contact potential;micron scale areas;electrical properties;field effect transistors;temporal evolution;chemically sensitive monolayers;free base porphyrin;zinc porphyrin