Confined electron-confined phonon scattering rates in wurtzite AlN/GaN/AlN heter

2020-02-03 18:40:53

electron AlN phonon confined

责任者: Pokatilov, E.P.;Nika, D.L.;Balandin, A.A. 单位: Dept. of Theor. Phys., State Univ. of Moldova, Kishinev, Moldova 来源出处: Journal of Applied Physics(J. Appl. Phys. (USA)),2004/05/15,95(10):5626-32 摘要: We investigate theoretically confined electron-confined phonon scattering rates in three-layered planar wurtzite AlN/GaN/AlN heterostructures with free-surface boundary conditions. The thicknesses of the core and cladding layers are chosen to be a few nanometers to ensure phonon and electron spectrum modification due to spatial confinement. We have considered electron-phonon interactions via deformation and piezoelectric potentials. The scattering rates are calculated for both intra- and intersubband transitions of confined electrons. The influence of the built-in electric field, characteristic for GaN/AlN interfaces, on polarization and intensity of the electron-acoustic phonon interaction in heterostructures is discussed. Specific features of the deformation and piezoelectric scattering of electrons in wurtzite three-layered heterostructures and their differences from the scattering in homogenous slabs have been established. It has been shown that it is possible to tune the strength of the electron-phonon interaction in a desired way by varying the core and cladding layers thicknesses. The obtained results can be used for optimization of GaN-based heterostructures for electronic and spintronic applications 关键词: aluminium compounds;electron diffraction;electron-phonon interactions;gallium compounds;III-V semiconductors;semiconductor heterojunctions;semiconductor quantum wells;wide band gap semiconductors;confined electron-confined phonon scattering rates;wurtzite AlN/GaN/AlN heterostructures;free surface boundary conditions;cladding layers;phonon spectrum;electron spectrum;electron-phonon interactions;deformation;piezoelectric potentials;intrasubband transitions;intersubband transitions;electron-acoustic phonon interaction;semiconductor quantum wells;electronic applications;spintronic applications;AlN-GaN-AlN