Behavior of nano-N-channel metal-oxide-semiconductor off-state leakage currents

2020-02-02 23:17:43

current state devices gate oxide

责任者: Heng-Sheng Huang;Fu-Yuan Tuan;Wen-Liang Hsu;Yao, Y.D.;Chen, J.K.;Mason Fang 单位: Inst. of Autom. Technol., Nat. Taipei Univ. of Technol., Taiwan 来源出处: Japanese Journal of Applied Physics, Part 1 (Regular Papers, Short Notes Review Papers)(Jpn. J. Appl. Phys. 1, Regul. Pap. Short Notes Rev. Pap. (Japan)),2004/02/,43(2):467-70 摘要: In this paper, leakage current behavior is discussed, particularly in the off state of nano-N-channel metal-oxide-semiconductor (NMOS) devices. In our experimental results, we observed a special phenomenon in the off-state I-V (off-current components vs VD) curves. We propose a new model named the gate current induced punch-through (GCIP) model, which is discussed in detail to explain this phenomenon. As the complementary metal-oxide-semiconductor (CMOS) device dimensions are being scaled down to the nano-scale level, the gate oxide thickness is becoming significantly thinner than in any other previously produced devices. The use of ultrathin gate oxide induces an off-state gate leakage current which is not neglect in the gate terminal, and possibly causes the generation of electron-hole pairs in the CMOS substrate. The avalanche effect on electron-hole pair generation finally causes the device punch-through. This punch-through phenomenon is induced by the gate tunneling current, and therefore we named it the GCIP model 关键词: leakage currents;MIS devices;MOSFET;nano-N-channel metal oxide semiconductor devices;off-state gate leakage currents;off state I-V curves;NMOS devices;gate current induced punch;complementary metal-oxide-semiconductor devices;CMOS devices;ultrathin gate oxide;electron-hole pair generation;gate tunneling current