Contact resistances at nano interfaces of conducting polymers, poly(3-alkylthiop

2020-01-31 01:32:34

potential contact Al Au PHT

责任者: Kaneto, K.;Takashima, W. 单位: Graduate Sch. of Life Sci. & Syst., Kyushu Inst. of Technol., Kitakyushu, Japan 来源出处: IEICE Transactions on Electronics(IEICE Trans. Electron. (Japan)),2004/02/,E87-C(2):148-51 摘要: Electrical properties of contacts between head-tail coupled poly(3-hexylthiophene), PHT and Al (and Au) in planer type and sandwich type diodes of Al/PHT/Au have been studied. The contact resistances are directly evaluated by probing the potential profile of PHT between the metal electrodes using micromanipulators installed in scanning electron microscope. In the potential profile of planer type diode, a large potential cliff is observed at Al/PHT interface and some appreciable potential step is also found at PHT/Au interface. The contact resistance at the Al/PHT interface deduced from the potential profile shows the bias and its polarity dependence, indicating the existing of the Schottky like junction. At forward bias, it is found that the residual resistance at Al/PHT interface limits the diode performance. The residual resistance is supposed to be insulating layer of Al oxide. At larger reversed bias, the contact resistance at Al/PHT decreased abruptly due to the Zener breakdown. The potential profile of sandwich type diode is similar to that of planer type diode. It is found that even the PHT/Au contact shows the ohmic behavior, the contact resistance is significant as to limit the maximum current of the cells 关键词: aluminium;conducting polymers;contact resistance;gold;nanocontacts;ohmic contacts;scanning electron microscopes;semiconductor diodes;contact resistances;nano interfaces;conducting polymers;poly(3-alkylthiophene) Al and Au;sandwich type diodes;potential profile;metal electrodes;micromanipulators;scanning electron microscope;planer type diode;polarity dependence;Schottky like junction;residual resistance;Zener breakdown;ohmic behavior;Al;Au