Modeling of a nanoscale oxide aperture opening for a NSOM probe

2020-01-29 04:28:50

rate etching opening oxide aperture

责任者: Choi, S.S.;Ok, J.T.;Kim, D.W.;Jung, M.Y.;Park, M.J. 单位: Dept. of Phys. & Nanosci., Sun Moon Univ., Chungnam, South Korea 来源出处: Journal of the Korean Physical Society(J. Korean Phys. Soc. (South Korea)),2004/12/,45(6):1659-63 摘要: The fabrication of a nano-aperture array has attracted much interest due to its potential applications for near-field optical recording and optical trapping of single molecules in the nanoscale region. A parallel processing technique based on a nano-aperture array has also been investigated for its fast scan rate and control of a single molecule. In this work, the fabrication process of nano-aperture arrays and an analysis of the aperture opening mechanism will be presented. A series of oxide pyramid arrays have been fabricated by generating inverted pyramid arrays with square patterns of a few μm, growing stress-dependent non-uniform oxides on the inner surfaces, and etching the backside Si. The nano-apertures are opened at the apices of the pyramids by using a water-diluted HF solution, and the relation between the aperture diameters and the etch time presents good linearity with the proper opening rate, except for the initial stage of the etching. With a mathematically fitted function for the oxide curve near the apex, the time-dependent etch rate, the electron-beam-enhanced etch rate, and the variation in the opening rate are examined, and the results of an analysis of the parameters determining opening rate are discussed 关键词: electron beam applications;elemental semiconductors;etching;nanostructured materials;nanotechnology;near-field scanning optical microscopy;silicon;nanoscale oxide aperture opening;NSOM probe;nanoaperture array;etching;oxide pyramid arrays;water-diluted HF solution;electron-beam-enhanced etch rate;Si