Nonlithographic SiO2 nanodot arrays via template synthesis approach

2020-01-28 06:27:25

SiO2 arrays nanodot oxide masks

责任者: Young Kwan Cha;Seo, D.;Yoo, I.K.;Sangjin Park;Soo-Hwan Jeong;Chee Won Chung 单位: Samsung Adv. Inst. of Technol., Suwon, South Korea 来源出处: Japanese Journal of Applied Physics, Part 1 (Regular Papers, Short Notes Review Papers)(Jpn. J. Appl. Phys. 1, Regul. Pap. Short Notes Rev. Pap. (Japan)),2004/08/,43(8A):5657-9 摘要: We present a method for fabricating SiO2 nanodot arrays through pattern transfer of self-organized tantalum oxide hard masks on to a Si wafer. Tantalum oxide nanopillar arrays are formed at the bottom of anodic aluminum oxide by electrochemical anodization of the Al/Ta films on a Si wafer. Then the tantalum oxide nanopillars were used as hard masks for formation of SiO2 nanostructures. Ion milling was used for the pattern transfer. The density and diameter of the SiO2 nanodot arrays could be controlled by varying the anodizing conditions. The average diameters and areal density of prepared SiO2 nanodisks were 68 nm and 1010/cm2, respectively. Through this approach, it is expected that a wide variety of nanodisk arrays over large areas can be prepared 关键词: anodisation;electrochemistry;masks;nanolithography;nanostructured materials;self-assembly;silicon compounds;nanolithographic SiO2 nanodot arrays;template synthesis;electrochemical anodization;Al/Ta films;SiO2 nanostructures;ion milling;SiO2 nanodisks;self-organized tantalum oxide hard masks;tantalum oxide nanopillars;Si wafer;areal density;68 nm;SiO2