Size-dependent resonant tunneling and storing of electrons in a nanocrystalline

2020-01-24 21:08:56

NC Si plasma SiO2 dependent

责任者: Liangcai Wu;Min Dai;Xinfan Huang;Wei Li;Kunji Chen 单位: Dept. of Phys., Nanjing Univ., China 来源出处: Journal of Vacuum Science Technology B (Microelectronics and Nanometer Structures)(J. Vac. Sci. Technol. B, Microelectron. Nanometer Struct. (USA)),2004/03/,22(2):678-81 摘要: We use frequency-dependent capacitance spectroscopy to study electron tunneling and storing in nanocrystalline silicon (nc-Si) floating-gate double-barrier structure (SiO2/nc-Si/SiO2) fabricated in situ by plasma oxidation and layer-by-layer deposition in a plasma-enhanced chemical vapor deposition system. Distinct size- and frequency-dependent capacitance peaks due to Coulomb blockade charging and quantum-confinement effects have been observed by capacitance spectroscopy in a large ensemble of nc-Si dots at room temperature for the first time in a SiO2/nc-Si/SiO2 system. This finding demonstrates that the Coulomb blockade for electrons in nc-Si dots is larger than the size fluctuation effects on the quantum confinement for our nc-Si floating-gate double-barrier structure 关键词: Coulomb blockade;elemental semiconductors;nanostructured materials;plasma CVD coatings;resonant tunnelling;semiconductor quantum dots;semiconductor-insulator boundaries;silicon;silicon compounds;size effect;size-dependent resonant electron tunneling;electron storing;nanocrystalline silicon floating-gate double-barrier structure;frequency-dependent capacitance spectroscopy;plasma oxidation;layer-by-layer deposition;plasma-enhanced chemical vapor deposition;Coulomb blockade charging;quantum-confinement effects;nc-Si dots;size fluctuation effects;SiO2-Si-SiO2