Nc-Si/SiO2 multilayer prepared by the method of laser constrained crystallizatio

2020-01-23 23:23:27

Si plasma laser multilayer sublayer

责任者: Qiao Feng;Huang Xin-Fan;Zhu Da;Ma Zhong-Yuan;Zou He-Cheng;Sui Yan-Ping;Li Wei;Zhou Xiao-Hui;Chen Kun-Ji 单位: State Key Lab. of Solid Microstructures, Nanjing Univ., China 来源出处: Acta Physica Sinica(Acta Phys. Sin. (China)),2004//,53(12):4303-7 摘要: We prepared a-Si:H/SiO2 multilayer by using layer by layer deposition of a-Si:H sublayer and in-situ plasma oxidation in the plasma-enhanced chemical vapor deposition system. Based on the constrained crystallization principle of a-Si:H sublayer, we employed KrF excimer laser to irradiate a-Si:H sublayer and crystallize it. The results of Raman scattering spectroscopy and electron diffraction show that nanocrystal silicon (nc-Si) has been formed within the as-deposited a-Si:H/SiO2 multilayer, and that the size of nc-Si can be controlled precisely according to the thickness of a-Si:H sublayer. We also studied the photoluminescence(PL) property of the sample and the effect of laser energy density on PL 关键词: amorphous semiconductors;crystallisation;electron diffraction;elemental semiconductors;hydrogen;laser beam effects;laser materials processing;nanostructured materials;nanotechnology;oxidation;photoluminescence;plasma CVD;Raman spectra;silicon;silicon compounds;in-situ plasma oxidation;plasma-enhanced chemical vapor deposition;excimer laser;Raman scattering spectroscopy;electron diffraction;as-deposited multilayer;photoluminescence;laser energy density;laser constrained crystallization;sublayer;(Si:H)-SiO2