Preparation of GaN thin film and Ga2O3 nanoribbons by plasma immersion ion impla

2020-01-21 12:09:54

ion GaN Raman Ga2O3 nanoribbons

责任者: Lo, K.C.;Ho, H.P.;Fu, K.Y.;Chu, P.K.;Li, K.F.;Cheah, K.W. 单位: Dept. of Electron. Eng., Chinese Univ. of Hong Kong, China 来源出处: Journal of Applied Physics(J. Appl. Phys. (USA)),2004/06/15,95(12):8178-84 摘要: A method for producing gallium nitride (GaN) and gallium oxide (Ga2O3) nanoribbons by the combination of plasma immersion ion implantation of nitrogen into GaAs and rapid thermal annealing (RTA) has been investigated. Our approach uses a broad ion-impact energy distribution with variable implant doses to form a spread-out nitrogen depth profile and an amorphous surface layer. This approach circumvents the retained-dose limitation and low nitrogen content problems associated with ion beam implantation at fixed energy. Raman spectroscopy, transmission electron microscopy (TEM), x-ray diffraction and x-ray photoelectron spectroscopy were conducted on the samples. For the samples which had undergone RTA at 850°C for 2 min, a Raman peak at 577 cm-1 associated with GaN was observed. The weak Raman intensity indicated that a small amount of GaN was present. Cross-sectional TEM imaging showed that the thickness of the region containing GaN was about 40 nm. When RTA was performed at 950°C for 2 min, Ga2O3 nanoribbons were found on the GaAs sample surface instead. The ribbons were 0.1-2 μm in width, several tens of nanometers in thickness, and several tens of micrometers in length. Raman spectroscopy confirmed that the ribbons are single crystalline Ga2O3. In addition, the Ga2O3 ribbons were found to possess strong visible photoluminescence. The possible formation mechanism of these nanoribbons is discussed 关键词: cathodoluminescence;gallium compounds;III-V semiconductors;nanostructured materials;photoluminescence;plasma immersion ion implantation;Raman spectra;rapid thermal annealing;semiconductor growth;semiconductor thin films;transmission electron microscopy;wide band gap semiconductors;X-ray diffraction;X-ray photoelectron spectra;GaN thin film;Ga2O3 nanoribbons;N plasma immersion ion implantation;gallium nitride nanoribbons;gallium oxide nanoribbons;GaN nanoribbons;rapid thermal annealing;RTA;ion impact energy distribution;spread out nitrogen depth profile;amorphous surface layer;dose limitation;nitrogen content;ion beam implantation;Raman spectroscopy;transmission electron microscopy;X-ray diffraction;XRD;X-ray photoelectron spectroscopy;XPS;Raman intensity;cross-sectional TEM imaging;GaAs sample surface;single crystalline Ga2O3;visible photoluminescence;cathodoluminescence;850 degC;2 min;40 nm;950 degC;0.1 to 2 micron;GaN;Ga2O3