Photoluminescence characterization of zinc oxide nanoparticle defects

2020-01-21 02:31:43

energy interstitial zinc EV oxide

责任者: Li Cheng-Bin;Xu Zhi-Zhan;Jia Tian-Qing;Feng Dong-Hai;Sun Hai-Yi;Li Xiao-Xi;Xu Shi-Zhen 单位: Shanghai Inst. of Opt. & Fine Mech., Chinese Acad. of Sci., China 来源出处: Chinese Journal of Liquid Crystals and Displays(Chin. J. Liq. Cryst. Disp. (China)),2004/12/,19(6):431-3 摘要: The photoluminescence spectra of zinc oxide nanoparticle (with an average diameter ~10 nm) defects were acquired by a fluorescent spectrophotometer and femtosecond laser pulse at room temperature. The defect energy levels were verified. The energy interval between the bottom of the conduction band and interstitial zinc level is 0.4 eV. As for zinc vacancy, oxide antisite, oxygen vacancy, and interstitial oxygen, the energy intervals are 3.06 eV, 2.28 eV, 1.56 eV and 2.1 eV, respectively 关键词: antisite defects;conduction bands;defect states;high-speed optical techniques;II-VI semiconductors;interstitials;nanoparticles;photoluminescence;vacancies (crystal);zinc compounds;zinc oxide nanoparticle defects;photoluminescence spectra;fluorescent spectrophotometer;femtosecond laser pulse;room temperature;defect energy levels;conduction band;interstitial zinc level;zinc vacancy;oxide antisite;oxygen vacancy;interstitial oxygen;293 to 298 K;10 nm;ZnO