Control of size and shape of nc-Si in a-SiNx/a-Si:H multilayers by laser induced

2020-01-15 04:57:52

Si crystallization laser sublayer SiNx

责任者: Zhang, L.;Chen, K.;Huang, X.;Wang, L.;Xu, J.;Li, W. 单位: Dept. of Phys., Nanjing Univ., China 来源出处: Applied Physics A (Materials Science Processing)(Appl. Phys. A, Mater. Sci. Process. (Germany)),2003/08/,A77(3-4):485-9 摘要: Size-controlled nanocrystalline silicon (nc-Si) has been prepared from a-SiNx/a-Si:H multilayers by pulsed laser induced crystallization. Transmission electron microscopy (TEM) analyses show that the growth of nc-Si is constrained by the a-SiNx/a-Si:H interface, and the size of nc-Si is controlled by the laser energy density and the a-Si sublayer thickness when the a-Si sublayer thickness is less than 10 nm. On the basis of the experimental results, we discuss the transitional process from the spherical shape to the cylindrical shape in the growth model of nc-Si crystallization. The constrained effect for the crystal growth increases with a decrease of the a-Si sublayer thickness. The critical thickness of the a-Si sublayer for constrained crystallization can be determined by the present model. Moreover, the increase of the crystallization temperature in the ultra-thin a-Si sublayer can be explained 关键词: amorphous state;crystallisation;elemental semiconductors;hydrogen;interface structure;multilayers;nanostructured materials;plasma CVD;semiconductor growth;silicon;silicon compounds;transmission electron microscopy;amorphous SiNx multilayers;amorphous Si:H multilayers;size controlled nanocrystalline silicon;pulsed laser induced crystallization;transmission electron microscopy;TEM;SiNx/Si:H interface;laser energy density;ultrathin Si sublayer thickness;structural transition;crystal growth;10 nm;SiNx-Si:H;Si