Raman spectroscopy of silicon nanowires

2020-01-08 23:30:20

silicon Raman nanowires phonon confinement

责任者: Piscanec, S.;Cantoro, M.;Ferrari, A.C.;Zapien, J.A.;Lifshitz, Y.;Lee, S.T.;Hofmann, S.;Robertson, J. 单位: Eng. Dept., Univ. of Cambridge, UK 来源出处: Physical Review B (Condensed Matter and Materials Physics)(Phys. Rev., B, Condens, Matter Mater. Phys. (USA)),2003/12/15,68(24):241312-1 摘要: We measure the effects of phonon confinement on the Raman spectra of silicon nanowires. We show how previous spectra were inconsistent with phonon confinement, but were due to intense local heating caused by the laser. This is peculiar to nanostructures, and would require orders of magnitude more power in bulk Si. By working at very low laser powers, we identify the contribution of pure confinement typical of quantum wires 关键词: elemental semiconductors;nanowires;Raman spectra;semiconductor quantum wires;silicon;Raman spectroscopy;silicon nanowires;phonon confinement;Si