Swift heavy ion induced growth of nanocrystalline silicon in silicon oxide

2019-12-31 20:56:49

separation Fourier silicon ion oxide

责任者: Chaudhari, P.S.;Bhave, T.M.;Kanjilal, D.;Bhoraskar, S.V. 单位: Dept. of Phys., Univ. of Pune, India 来源出处: Journal of Applied Physics(J. Appl. Phys. (USA)),2003/03/15,93(6):3486-9 摘要: Recyrstallization of nanocrystalline silicon in silicon oxide has been initiated with swift heavy ion irradiation. 100 MeV Ni ions from pelletron were used for irradiating the thin films of silicon oxide (SiOx) at fluences varying from 1×1012 to 5×1013 ions/cm2. Phase separation between silicon and silicon oxide is seen to be responsible for the photoluminescence spectrum peaking around 350 and 610 nm. This spectral nature is understood on the basis of defects and interface states in SiOx matrix and silicon nanocrystals, respectively. The formation of silicon nanocrystals resulting from the phase separation has been confirmed from the complimentary evidence of change in the refractive index, Fourier transform infrared spectroscopy, and energy dispersive x-ray analysis. High electronic loss associated with the 100 MeV Ni ions is thought to be responsible for the recrystallization, and rearrangement of silicon 关键词: Fourier transform spectra;infrared spectra;interface states;ion beam effects;materials preparation;nanostructured materials;phase separation;photoluminescence;recrystallisation;refractive index;silicon;silicon compounds;thin films;X-ray chemical analysis;swift heavy ion induced growth;nanocrystalline silicon;recrystallization;silicon oxide thin films;phase separation;photoluminescence;interface states;refractive index;Fourier transform infrared spectroscopy;energy dispersive X-ray analysis;electronic loss;100 MeV;350 to 610 nm;SiO-Si;Ni