Doping dependent NH3 sensing of indium oxide nanowires

2019-12-23 03:12:15

NH3 Sensing nanowires doping dependent

责任者: Daihua Zhang;Chao Li;Xiaolei Liu;Song Han;Tao Tang;Chongwu Zhou 单位: Dept. of E.E.-Electrophys., Univ. of Southern California, Los Angeles, CA, USA 来源出处: Applied Physics Letters(Appl. Phys. Lett. (USA)),1 Sept. 2003,83(9):1845-7 摘要: NH3 gas sensing properties of In2O3 nanowires were carefully studied. Change of conductance in opposite directions was observed with different nanowire sensors. We suggest that this differential response is caused by various doping concentrations in the semiconducting In2O3 nanowires. In addition, we have also investigated a gate-screening effect exhibited in our nanowire chemical sensors at high NH3 concentrations, which is induced by adsorbed NH3 molecules working as charge traps. Both the doping-dependent response and the gate-screening effect will be especially valuable and helpful for understanding the detailed sensing mechanism of semiconducting metal oxide materials 关键词: ammonia;gas sensors;indium compounds;nanowires;semiconductor materials;doping dependent NH3 sensing;gas sensing properties;In2O3 nanowires;differential response;doping concentrations;gate-screening effect;doping-dependent response;NH3;In2O3