Nanofabrication of photonic crystal membrane lasers

2019-12-17 19:55:02

beam membrane HCl etching lasers

责任者: Cao, J.R.;Po-Tsung Lee;Sang-Jun Choi;Shafiiha, R.;Seung-June Choi;OBrien, J.D.;Dapkus, P.D. 单位: Dept. of Electron. Eng., California Univ., Los Angeles, CA, USA 来源出处: Journal of Vacuum Science Technology B (Microelectronics and Nanometer Structures)(J. Vac. Sci. Technol. B, Microelectron. Nanometer Struct. (USA)),2002/03/,20(2):618-21 摘要: We present techniques for fabricating photonic crystal (PC) membrane defect lasers. These nanostructures operate as optically pumped lasers under pulsed conditions at room temperature. The thin membrane PC defect structures are formed by transferring an electron-beam lithographically defined lattice pattern into an epitaxial layer structure by a sequential process of ion beam etching, reactive ion etching, and electron cyclotron resonance etching steps. A V-shape undercut channel is formed by a wet chemical etching using a 4:1 mixture of HCl and H2O to create the suspended membrane. We include a detailed description of a dependable and repeatable HCl undercut process for the PC structure 关键词: etching;gallium arsenide;III-V semiconductors;indium compounds;membranes;nanotechnology;optical pumping;photonic band gap;quantum well lasers;semiconductor growth;semiconductor quantum wells;solid lasers;sputter etching;nanofabrication;photonic crystal membrane defect lasers;optically pumped lasers;electron-beam lithographically defined lattice pattern;epitaxial layer structure;ion beam etching;reactive ion etching;electron cyclotron resonance etching;V-shape undercut channel;wet chemical etching;HCl undercut process;InGaAsP quantum wells;300 K;HCl-H2O;HCl;H2O;InP-InGaAsP;InP