Chemical profiling of single nanotubes: Intramolecular p-n-p junctions and on-tu

2019-12-16 07:05:27

single electron nanotubes nanotube junctions

责任者: Jing Kong;Jien Cao;Hongjie Dai;Anderson, E. 单位: Dept. of Chem., Stanford Univ., CA, USA 来源出处: Applied Physics Letters(Appl. Phys. Lett. (USA)),2002/01/07,80(1):73-5 摘要: Electrical transport properties of intramolecular p-n-p junctions formed on individual semiconducting carbon nanotubes are reported. Chemical dopant “profiling” along the length of a nanotube divides the nanotube into two p-doped sections and a central n-doped section. The double p-n junctions formed on the nanotube dictate the electrical characteristics of the system. Well-defined and highly reproducible single-electron transistors with much smaller size than the geometrical length of the nanotube are obtained 关键词: carbon nanotubes;doping profiles;elemental semiconductors;molecular electronics;p-n junctions;single electron transistors;intramolecular p-n-p junction;on-tube single electron transistor;electrical transport;single semiconducting carbon nanotube;chemical dopant profiling;C