Analysis of complex heterogeneous surfaces by bias-dependent scanning tunneling

2019-12-14 13:44:01

Si scanning surface tunneling dependent

责任者: Goldfarb, I.;Briggs, G.A.D. 单位: Dept. of Solid Mech., Mater. & Syst., Tel Aviv Univ., Ramat Aviv, Israel 来源出处: Materials Science Engineering B (Solid-State Materials for Advanced Technology)(Mater. Sci. Eng. B, Solid-State Mater. Adv. Technol. (Switzerland)),2002/04/30,B91-92():115-19 摘要: We present analysis of various multicomponent surfaces, such as Si-Ge, Co-Ge and Co-Si, by combined bias-dependent scanning tunneling microscopy (STM) and spectroscopy (STS). Using the STMs capability for surface visualization with sub-nanometer resolution, and STSs capability to provide information directly linked to the surface density of states of these sub-nanometer regions, we were able to distinguish between such dissimilar nano-regions, some of which could only be revealed by bias-dependent STM imaging. The work emphasizes the need for a wider theoretical support in interpreting tunneling images and spectra 关键词: cobalt alloys;electronic density of states;Ge-Si alloys;germanium alloys;scanning tunnelling microscopy;scanning tunnelling spectroscopy;semiconductor materials;silicon alloys;surface states;surface structure;complex heterogeneous surfaces;bias-dependent scanning tunneling microscopy;scanning tunneling spectroscopy;multicomponent surfaces;combined bias-dependent STM-STS;surface visualization;sub-nanometer resolution;surface density of states;tunneling images;tunneling spectra;Si-Ge;Co-Ge;Co-Si