Effects of size quantization in the I-V characteristics of CdS bulk-nano junctio

2019-12-13 17:54:44

size quantum CdS DOTS junctions

责任者: Jinesh, K.B.;Kartha, C.S.;Vijayakumar, K.P. 单位: Lab. of ECTM, Delft Univ. of Technol., Netherlands 来源出处: Applied Surface Science(Appl. Surf. Sci. (Netherlands)),2002/07/15,195(1-4):263-9 摘要: We report the electrical properties of cadmium sulfide (CdS) nanoclusters investigated by fabricating bulk-nano (bn) junctions of CdS. These diodes exhibited the characteristic tunneling peaks in the reverse biasing region, which were used to estimate the cluster sizes, and are in agreement with those estimated from the X-ray diffraction (XRD) experiments. On forward biasing, the bn junction showed a step-like behavior, which could be a direct demonstration of the quantum size effects (QSE) exhibited by these clusters. This effect can be assigned either to the enhancement of the collective Coulomb blockade phenomenon occurring in the quantum dots or to the collective tunneling of electrons through the dots 关键词: cadmium compounds;Coulomb blockade;II-VI semiconductors;nanostructured materials;resonant tunnelling;semiconductor diodes;semiconductor junctions;semiconductor quantum dots;size effect;size quantization;I-V characteristics;CdS bulk-nano junctions;electrical properties;cadmium sulfide nanoclusters;tunneling;reverse biasing region;cluster size;X-ray diffraction;XRD;forward biasing;quantum size effects;collective Coulomb blockade phenomenon;quantum dots;collective electron tunneling;CdS