Cu/SiO2-x nanowires with compositional modulation structure grown via thermal ev

2019-12-11 03:02:28

Cu SiO2 nanowires modulation oxide

责任者: Wang, Y.G.;Jin, A.Z.;Zhang, Z. 单位: Center for Condensed Matter Phys., Chinese Acad. of Sci., Beijing, China 来源出处: Applied Physics Letters(Appl. Phys. Lett. (USA)),2002/12/02,81(23):4425-7 摘要: One-dimensional compositional modulation has been achieved in Cu/SiO2-x nanowires prepared at the substrate temperature of 1000°C by thermal evaporation of a cuprous oxide and silicon mono-oxide mixture. The synthesized nanowires consist of the Cu spheres uniformly piled up along the longitudinal direction of the nanowires to form a modulation structure with an average period of about 140 nm. This periodicity could be adjusted by changing the CuO concentration in the source materials mixture 关键词: copper;nanostructured materials;silicon compounds;Cu/SiO2 nanowires;compositional modulation structure;thermal evaporation;cuprous oxide;silicon mono-oxide mixture;nanowire synthesis;CuO concentration;1000 degC;Cu-SiO2