Non-ohmic hopping conduction in Ge nanocrystalline film

2019-12-03 15:05:02

temperature GE conduction dependent hopping

责任者: Banerjee, S. 单位: Dept. of Electron. Eng., Univ. of Electro-Commun., Tokyo, Japan 来源出处: Physica E(Physica E (Netherlands)),2002/11/,15(3):164-8 摘要: The temperature-dependent transport properties of Ge nanocrystalline films (nanofilms) prepared by the cluster beam evaporation technique have been studied. The nanofilms of thicknesses about 20 nm, deposited on the substrates at room temperature, exhibit nonlinear current-voltage characteristics in the low bias range with decreasing temperature. In order to understand the conduction via the grain boundaries between two adjacent Ge nanocrystals, the temperature-dependent conductivity of the nanofilms has also been investigated, which could be explained by the Mott variable range hopping mechanism between 100 and 300 K. Below 100 K, the conductivity is limited by ordinary tunneling of carriers giving rise to temperature-independent behavior 关键词: elemental semiconductors;germanium;hopping conduction;nanostructured materials;semiconductor thin films;nonohmic hopping conduction;temperature-dependent transport properties;Ge;nanocrystalline film;cluster beam evaporation;nanofilm thickness;nonlinear current-voltage characteristics;grain boundary conduction;Mott variable range hopping;20 nm;100 to 300 K