Efficient intraband optical transitions in Si nanocrystals

2019-11-29 18:10:39

Si binding phonon calculations transitions

责任者: Allan, G.;Delerue, C. 单位: Dept. ISEN, UMR CNRS, Lille, France 来源出处: Physical Review B (Condensed Matter and Materials Physics)(Phys. Rev, B, Condens, Matter Mater. Phys. (USA)),2002/12/15,66(23):233303-1 摘要: Efficient intraband optical transitions in the infrared range are predicted in n-type Si nanocrystals using tight-binding calculations of no-phonon and one-phonon-assisted processes taking into account each vibrational mode. New types of transitions are reported, with no equivalence in direct gap semiconductors, between the confined states in the six valleys of the conduction band. They involve phonons with wave vectors either at the center or at the edge of the Brillouin zone. The efficiency of the main no-phonon and phonon-assisted transitions is comparable to the one in III-V semiconductor quantum dots 关键词: Brillouin zones;conduction bands;elemental semiconductors;infrared spectra;nanostructured materials;phonons;silicon;tight-binding calculations;vibrational modes;intraband optical transitions;nanocrystals;infrared range;tight-binding calculations;no-phonon processes;one-phonon-assisted processes;vibrational mode;direct gap semiconductors;conduction band;Brillouin zone;Si