Electron-phonon interaction in semiconductor spherical quantum dot embedded in a

2019-11-26 15:43:33

QD energy ground phonons HgS

责任者: Tkach, M.;Holovatsky, V.;Voitsekhivska, O.;Mykhalyova, M.;Fartushynsky, R. 单位: Chernivtsi Nat. Univ., Ukraine 来源出处: Physica Status Solidi B(Phys. Status Solidi B (Germany)),2001/06/01,225(2):331-42 摘要: Different types of electron (hole) ground energy level renormalization due to confined (L) and interface (I) phonons in a spherical quantum dot embedded in a semiconductor medium are investigated in the β-HgS/CdS nanoheterosystem. It is shown that for all QD sizes the shift of the ground energy level (Δ) is generally caused by the interaction of electron and confined phonons of the dot (L0) and of the medium (L1). The contribution of interface phonons (I+, I-) to the magnitude Δ is comparable with the contribution of L-phonons only at small QD radii. For all QD radii, the interaction with all phonons through all states of the continuous spectrum gives a one order smaller contribution to Δ, than the interaction through the states of the discrete spectrum. When the QD radius increases, the I-phonon contribution decreases and the L-phonon contribution increases and consequently, the total shift becomes closer to its magnitude in the bulk HgS crystal 关键词: cadmium compounds;effective mass;electron-phonon interactions;Greens function methods;ground states;II-VI semiconductors;interface phonons;mercury compounds;renormalisation;semiconductor quantum dots;electron-phonon interaction;semiconductor spherical quantum dot;electron ground energy level renormalization;hole ground energy level renormalization;confined phonons;interface phonons;β-HgS/CdS nanoheterosystem;QD size;ground energy level shift;HgS-CdS