Suppression of 1/f noise by permanent magnetic field in ion-implanted HgCdTe pho

2019-11-26 05:48:15

magnetic noise field photodiodes HgCdTe

责任者: Khait, Yu.L.;Garber, V.;Bahir, G.;Snapiro, I. 单位: Solid State Inst., Israel Inst. of Technol., Haifa, Israel 来源出处: Applied Physics Letters(Appl. Phys. Lett. (USA)),2001/10/29,79(18):2990-2 摘要: A brief report on the experimental evidence and theoretical explanation of substantial effects of a permanent magnetic field (PMF) of B=0-2 T on 1/f noise in HgCdTe n+-p high performance planar photodiodes (HPPD) is presented. It is shown that the PMF suppresses 1/f noise in the HPPD at lower frequencies fL<f0≈5-7 s-1 and increases it at higher ones fH>f0. These PMF effects follow from the earlier proposed nanoscopic stochastic theory of 1/f noise in solids. The proposed theoretical model is in good agreement with observations 关键词: 1/f noise;cadmium compounds;II-VI semiconductors;mercury compounds;photodiodes;semiconductor device noise;1/f noise suppression;permanent magnetic field;ion-implanted HgCdTe photodiodes;high performance planar photodiodes;HgCdTe