Characterizations of simultaneously fabricated silicon and silicon monoxide nano

2019-11-23 19:00:49

nm silicon nanowires Japan fabricated

责任者: Jifa Qi;Matsumoto, T.;Masumoto, Y. 单位: Single Quantum Dot Project, Japan Sci. & Technol. Corp., Ibaraki, Japan 来源出处: Japanese Journal of Applied Physics, Part 2 (Letters)(Jpn. J. Appl. Phys. 2, Lett. (Japan)),2001/02/15,40(2B):134-6 摘要: Silicon and silicon monoxide (SiO) nanowires have been simultaneously fabricated by simply sublimating a pressed silicon powder plate (Si and Fe mixtures) at 1200°C in a flowing argon gas environment. The length of the SiO wire exceeds 0.8 mm and its average diameter varies from 70 nm to 1.35 μm, while the length of the silicon nanowire reaches 5 micrometers, with its average diameter varying from 20 to 40 nm. Both wires possess uniform diameters throughout the entire lengths, and smooth surfaces 关键词: elemental semiconductors;nanotechnology;semiconductor quantum wires;silicon;silicon compounds;simultaneously fabricated nanowires characterization;pressed powder plate;uniform diameters;smooth surfaces;0.8 mm;70 nm to 1.35 mum;5 mum;20 to 40 nm;1200 C;SiO;Si