Semiconductor process monitoring using infrared diode laser absorption spectrosc

2019-11-22 17:09:24

monitoring process semiconductor Japan spectroscopy

责任者: Hori, M.;Goto, T. 单位: Dept. of Quantum Eng., Nagoya Univ., Japan 来源出处: Journal of the Japan Society of Infrared Science and Technology(J. Jpn. Soc. Infrared Sci. Technol. (Japan)),2001//,11(1):2-14 摘要: In order to realize the high performance of the next generations semiconductor process, it is necessary to develop a new method to control the process with a high accuracy on the basis of the information on the compositions and densities of radicals, that is, precursors for etching and thin film deposition. Infrared diode laser absorption spectroscopy (IRLAS) is an excellent technique for monitoring the semiconductor process because it enables us to measure various kinds of radicals and molecules nondestructively and in real time. In this paper, the monitored results of radicals in the semiconductor process using IRLAS are described 关键词: etching;infrared spectroscopy;integrated circuit technology;nanotechnology;nondestructive testing;process control;process monitoring;semiconductor process monitoring;infrared diode laser absorption spectroscopy;process control;radical compositions;real time measurement;radical densities;etching;thin film deposition;monitoring;nondestructive testing