Synthesis and characterization of ZnO thin films for UV laser

2019-11-19 21:16:43

films Deposition laser adhesion stoichiometry

责任者: Mitra, A.;Thareja, R.K.;Ganesan, V.;Gupta, A.;Sahoo, P.K.;Kulkarni, V.N. 单位: Dept. of Phys., Indian Inst. of Technol., Kanpur, India 来源出处: Applied Surface Science(Appl. Surf. Sci. (Netherlands)),2001/04/30,174(3-4):232-9 摘要: We report on deposition of zinc oxide thin films on glass substrate at room temperature in ambient oxygen pressure ranging from 10 mTorr to 1 Torr by pulsed laser deposition. As grown polycrystalline thin films were optically pumped to investigate the dependence of laser action and photoluminescence (PL) on stoichiometry and microstructure of the films. The intensity of the laser emission increases with thickness of the film and depends on the size of nano-crystallites. Films deposited at pressures lower than 300 mTorr showed better morphology, stoichiometry and adhesion quality. X-ray diffraction, atomic force microscopy, Rutherford backscattering and PL techniques were used to characterize as grown films 关键词: adhesion;atomic force microscopy;crystal microstructure;crystallites;II-VI semiconductors;nanostructured materials;photoluminescence;pulsed laser deposition;Rutherford backscattering;semiconductor growth;semiconductor lasers;stoichiometry;X-ray diffraction;zinc compounds;synthesis;characterization;ZnO thin films;UV laser;deposition;glass substrate;room temperature;ambient oxygen pressure;pulsed laser deposition;as grown polycrystalline thin films;laser action;photoluminescence;stoichiometry;microstructure;laser emission;nanocrystallites;morphology;adhesion quality;X-ray diffraction;atomic force microscopy;Rutherford backscattering;PL techniques;10 mtorr to 1 torr;ZnO