Observation of crossing pores in anodically etched n-GaAs

2019-11-19 07:56:49

HCl GaAs pores aqueous anodically

责任者: Langa, S.;Carstensen, J.;Christophersen, M.;Foll, H.;Tiginyanu, I.M. 单位: Fac. of Eng., Christian-Albrechts-Univ., Kiel, Germany 来源出处: Applied Physics Letters(Appl. Phys. Lett. (USA)),2001/02/19,78(8):1074-6 摘要: Pores in GaAs in the micrometer range and oriented in ⟨111⟩ directions have been observed during the anodization of GaAs in aqueous HCl electrolytes. A direct evidence of pores intersection is presented which is a very promising feature for three-dimensional micro- and nanostructuring of III-V compounds for the production of photonic materials 关键词: anodisation;etching;gallium arsenide;III-V semiconductors;surface topography;crossing pores;anodically etched n-GaAs;micrometer range;aqueous HCl electrolytes;photonic materials;GaAs;HCl