Time domain measurement of spin-dependent recombination

2019-11-17 17:12:35

measurement electron spin dependent recombination

责任者: Boehme, C.;Lips, K. 单位: Hahn-Meitner-Inst., Berlin, Germany 来源出处: Applied Physics Letters(Appl. Phys. Lett. (USA)),2001/12/24,79(26):4363-5 摘要: A defect characterization method is presented, the time domain measurement of spin-dependent recombination (TSR). Recombination between paramagnetic states is changed rapidly by electron spin resonant excitation through strong nanosecond microwave pulses. After the pulse, a slow relaxation of the recombination rate towards its steady state takes place. By measuring the current transient after the resonant pulse, information about dissociation and recombination probabilities of spin pairs is directly obtained for a distinct recombination path. Dangling bond recombination in microcrystalline silicon was used as model process for the demonstration of TSR 关键词: dangling bonds;defect states;electron-hole recombination;paramagnetic resonance;spin-dependent recombination;time domain measurement;defect characterization;paramagnetic states;electron spin resonant excitation;nanosecond microwave pulses;current transient;spin pair dissociation;dangling bond