Enhancement of hot-electron generation rate in Schottky source metal-oxide-semic

2019-11-11 08:49:28

hot source MOSFET oxide Schottky

责任者: Uchida, K.;Matsuzawa, K.;Koga, J.;Takagi, S.;Toriumi, A. 单位: Adv. LSI Technol. Lab., Toshiba Corp., Yokohama, Japan 来源出处: Applied Physics Letters(Appl. Phys. Lett. (USA)),2000/06/26,76(26):3992-4 摘要: Source-side hot-electron generation is experimentally demonstrated in Schottky source metal-oxide-semiconductor field-effect transistors (MOSFETs). An asymmetric n-type MOSFET having a CoSi2 layer in place of one of the n+ source/drain regions has been fabricated and intensively investigated. When the CoSi2 layer is used as the source, large gate current and negative-differential conductance (NDC) are simultaneously observed, whereas, when the n+ region is used as the source, both gate current and NDC are not observed. By comparing the device characteristics before and after the NDC observation, it is concluded that the gate current is due to hot electrons generated at the Schottky source side and the NDC is caused by trapped electrons in the oxide. These source-side hot electrons will open up the way to the realization of deca-nanoscaled high-speed devices 关键词: cobalt compounds;elemental semiconductors;hot carriers;hot electron transistors;MOSFET;silicon;hot-electron generation rate enhancement;Schottky source MOSFET;metal-oxide-semiconductor field-effect transistors;asymmetric n-type MOSFET;CoSi2 layer;gate current;negative-differential conductance;device characteristics;oxide-trapped electrons;CoSi2-Si